GAO Weilin.BAI Guangrun
,
ZHOU Zhimin
,
LUAN Guifu Northeast University of Technology.Shenyang
,
ChinaLONG Chunman Anshan Iron and Steel Company
,
China Lecturer
,
Post Box No.92.Northeast University of Technology.Shenyang 110006
,
China
金属学报(英文版)
Experimental investigation of hot deformation behaviour of Nb-bearing low carbon steel 14MnNb was carried out by Gleeble 1500 simulator.Regressive analysis was made of the re- lationship between deformation onditions and steady state flow stress during hot deformation and the peak fliw stress corresponding to dynamic recrystallization.Clarification was also described for the influence of strain-induced Nb(C.N)precipitation on the activation energy of deformation.On the basis of analyzing the processes of dislocation multiplication and re- coveries from cross-slip of screw dislocation and from climb of edge dislocation during plastic deformation of metals.the theoretical mpdel to predict flow stress under the condiltions of dy- namic recorery and recrystallization occirred simultancously was developed,The prediction about flow stress in practice,under various deformation conditions by the model seems in fair agreement with the experimental results.
关键词:
flow stress
,
null
,
null
,
null
Journal of Alloys and Compounds
A solid solution with formula (Y1-xTbx)(3)GaO6 (x = 0-0.5) was prepared by solid-state reaction method. Powder X-ray diffraction (XRD) shows that Y3GaO6 is isostructural to Gd3GaO6 (Cmc2(1)), and the lattice parameters are a = 8.8364(1) angstrom, b = 11.0899(1) angstrom and c = 5.3937(1) angstrom. Atomic parameters were derived by Rietveld refinement of the XRD pattern. Photoluminescence (PL) spectra show a strong green emission of 543 nm from the D-5(4) -> F-7(5) transition of Th3+ at room and liquid nitrogen temperature. There is a wide saturation range of the PL intensity for the Th3+ content from x = 0.04-0.20, and a long life time about 1200 mu s for the green 543 nm emission at room temperature. (c) 2006 Elsevier B.V. All rights reserved.
关键词:
Y3GaO6;crystal structure;Tb3+ doped;photoluminescence;luminescence properties;dependence;y3al5o12;phosphor;ions;ce3+;tb-3;uv
Journal of Solid State Chemistry
The crystal structures of a series of compounds with the composition Ln(3)GaO(6)(Ln = Nd, Sm, Eu, Gd, Tb, Dy, Ho and Er) synthesized by solid-state reaction at 1400degreesC are investigated. X-ray diffraction shows that Ln3GaO6 has a non-centro symmetric orthorhombic structure (space group Cmc2(1)). Lattice parameters a, b, c and cell volume and the average distances between Ln(l)-O, Ln(2)-O of these compounds decrease with the decreasing of the radii of trivalent Ln ions, which accord with the expected lanthanide contraction behavior. There are two sites of seven-fold coordination for Ln atoms with oxygens, and Ga atoms are in oxygen tetrahedra which are distorted and elongated along the a-axis. Magnetization measurements indicate that the susceptibility X changes with temperature in Curie-type manner. (C) 2004 Elsevier Inc. All rights reserved.
关键词:
Ln(3)GaO(6);crystal structure;Rietveld refinement;X-ray diffraction;garnets
Journal of Luminescence
Ln(3+) (Ln = Nd, Sm, Eu, Gd, Dy, Ho, Er)-doped Y3GaO6 compounds were prepared by solid-state reaction, and their optical spectra such as absorption, photoluminescence, excitation and time-resolved spectra have been measured for Ln Nd, Sm, Dy, Ho, Er. X-ray powder diffraction shows that the lattice parameters of the compounds (Y(0.96)Ln(0.04))(3)GaO6 decrease with the decrease of the radii of trivalent Ln(3+) ions, indicating that Ln(3+) ions have substituted for y(3+) ions in the lattice. Optical spectra show that there are obvious absorptions at ultraviolet to visible region. The strong emissions in visible and infra-red region show that Y3GaO6 is a suitable host for rare-earth-doped laser crystal and phosphor materials. (C) 2004 Elsevier B.V. All rights reserved.
关键词:
crystal-field;absorption-spectra;luminescence;y3ga5o12;glasses;garnet;y2o3;ions;laf3;tb3
Journal of Solid State Chemistry
A serial of samples in Y2O3-Ga2O3-Tm2O3 pseudo-ternary system are prepared by solid-state chemical reaction method. The range of solid solution in (Y1-xTmx)(3)GaO6 is 0 < x < 0.384. Powder X-ray diffraction shows that the compounds crystallize in Gd3GaO6 (Cmc2(1))-type structure. The solid solubilities of Y3+xGa5-xO12 (x = 0-0.77) and Tm3+xGa5-xO12 (x = 0-0.62) are 37.5-47.11 at% Y2O3, and 37.5-45.26 at% Tm2O3, respectively. PL spectra of Tm-doped Y3GaO6 show that there is a sharp blue emission at similar to 456 nm from the D-1(2) -> F-3(4) transition at room temperatures with two lifetimes (similar to 5 and similar to 15 mu s) and a narrow saturation range of PL intensity for the Tm3+ content from x = 0.005 to 0.03. The sharp emission and long lifetime of (Y1-xTmx)(3)GaO6 indicate that Y3GaO6 is a potential phosphor and laser crystal host material. (c) 2005 Elsevier Inc. All rights reserved.
关键词:
Tm3+ -doped Y3GaO6;Y2O3-Ga2O3-Tm2O3 system;(Y1-xTmx)(3)Ga5O12 solid;solution;luminescence;crystal-structure;luminescence;phosphor;cations;ions;tb3
张兰河
,
李德生
,
王旭明
,
张海丰
硅酸盐通报
为了提高生物除磷效率,研究采用AOA-SBR工艺进行了长期连续除磷实验,考察不同温度下碳源(乙酸钠、丙酸钠、葡萄糖)对PAO与GAO竞争的影响.结果表明:当温度由10℃升高至25℃时,利用丙酸钠作为碳源时,污泥含磷量与含糖量分别从7.2％和5.1％升高至7.9％和6.3％,PHA转化量升高了23.1 mg/L,厌氧释磷量从105.9 mg/L升高至149.9 mg/L,VSS/MLSS由71％降低至65％;利用乙酸钠作为碳源时,污泥含磷量与含糖量分别从6.9％和5.3％升高至7.6％和6.7％,PHA转化量升高了23.9 mg/L,厌氧释磷量从73.8 mg/L升高至108.8 mg/L,VSS/MLSS由73％降低至71％;利用葡萄糖作为碳源时,污泥含磷量与含糖量分别从5.8％和6.3％升高至6.6％和8.8％,PHA转化量升高了33.2 mg/L,厌氧释磷量从37.4 mg/L升高至43.2 mg/L,VSS/MLSS由80％升高至88％.当温度升高至30℃时,3个反应器均出现厌氧末期PHA浓度下降和糖原浓度升高,厌氧释磷量减少,污泥含磷量均下降,污泥含糖量上升,VSS/MLSS均很高.与葡萄糖相比,采用乙酸钠和丙酸钠作为碳源,有利于PAO生长繁殖,PAO为优势菌种,抑制GAO增殖.同时,低温更有利于PAO的生长繁殖.
关键词:
温度
,
碳源
,
SBR
,
PAO与GAO
郭蒙
,
王淑敏
,
王佳丽
,
李丹
,
高庆宇
,
李丽敏
应用化学
doi:10.3724/SP.J.1095.2014.30232
在pH=3.22的NaAc-HAc溶液中,应用循环伏安法、方波伏安法、荧光光谱法、紫外可见光谱法和黏度法研究了黄芩素(BAI)与鲱鱼精子DNA(fsDNA)之间的相互作用,发现二者通过沟槽作用形成一电活性较高的复合物,fsDNA为BAI提供了一个低极性的疏水环境导致BAI的峰电流显著增强,增强的峰电流与fsDNA在7.0×10-8 ～7.0×10-6 g/mL浓度范围内呈正比,由此建立了一种测定核酸的新方法,检测限达到4.1×10-8 g/mL.
关键词:
黄芩素
,
核酸
,
电化学
,
沟槽作用
宋庆功
,
徐霆耀
,
杨宝宝
,
郭艳蕊
,
陈逸飞
材料导报
doi:10.11896/j.issn.1005-023X.2015.18.027
宽禁带半导体β-Ga2O3因其出色的物理化学性能而备受关注,通过掺杂改善β-Ga2O3性能一直是研究的热点.采用基于密度泛函理论的第一性原理方法,利用广义梯度近似加U对Mg单原子掺杂β-Ga2O3体系的晶体结构、电子结构和光学性质等进行了研究和分析.总能量和结合能的对比显示:单原子替位掺杂β-Ga2O3时,Mg优先替代八面体位的Ga原子形成Mg-Gao体系.电子结构显示,Mg-Gao体系变为间接半导体,带隙变窄为4.672eV;其自旋极化率为100％,呈现半金属特性.作为光学材料,Mg-Gao体系可在紫外、深紫外区域工作,并且折射率、反射率和吸收率有所降低,透射率明显提高.
关键词:
Mg掺杂β-Ga2O3
,
第一性原理
,
晶体结构
,
电子结构
,
光学性质
Physical Review B
We reconsider and interpret the mechanical properties of the recently proposed allotrope of carbon, T-carbon [Sheng et al., Phys. Rev. Lett. 106, 155703 (2011)], using density functional theory in combination with different empirical hardness models. In contrast with the early estimation based on Gao et al.'s model, which attributes to T-carbon a high Vickers hardness of 61 GPa comparable to that of superhard cubic boron nitride (c-BN), we find that T-carbon is not a superhard material, since its Vickers hardness does not exceed 10 GPa. Besides providing clear evidence for the absence of superhardness in T-carbon, we discuss the physical reasons behind the failure of Gao et al.'s and Simunek and Vackar's (SV) models in predicting the hardness of T-carbon, residing in their improper treatment of the highly anisotropic distribution of quasi-sp(3)-like C-C hybrids. A possible remedy for the Gao et al. and SV models based on the concept of the superatom is suggested, which indeed yields a Vickers hardness of about 8 GPa.
关键词:
superhard rhenium diboride;elastic-constants;ambient-pressure;metal;borides;crystals;diamond;search;boron
